Charge trapping in semiconductors refers to the phenomenon where charge carriers (electrons or holes) become immobilized in localized energy states within the semiconductor material. These localized states, often introduced by defects, impurities, or interface states, can capture charge carriers and prevent them from contributing to electrical conduction. This trapping process can significantly affect the electrical properties of semiconductors, leading to issues such as reduced mobility, threshold voltage shifts, and increased noise in electronic devices.
The trapped charges can be thermally released, leading to hysteresis effects in device characteristics, which is especially critical in applications like transistors and memory devices. Understanding and controlling charge trapping is essential for optimizing the performance and reliability of semiconductor devices. The mathematical representation of the charge concentration can be expressed as:
where is the total trapped charge, represents the density of trap states, and is the probability of occupancy of these trap states.
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