Phase-Change Memory (PCM) is a type of non-volatile storage technology that utilizes the unique properties of certain materials, specifically chalcogenides, to switch between amorphous and crystalline states. This phase change is achieved through the application of heat, allowing the material to change its resistance and thus represent binary data. The amorphous state has a high resistance, representing a '0', while the crystalline state has a low resistance, representing a '1'.
PCM offers several advantages over traditional memory technologies, such as faster write speeds, greater endurance, and higher density. Additionally, PCM can potentially bridge the gap between DRAM and flash memory, combining the speed of volatile memory with the non-volatility of flash. As a result, PCM is considered a promising candidate for future memory solutions in computing systems, especially in applications requiring high performance and energy efficiency.
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