Shapley Value

The Implicit Runge-Kutta methods are a class of numerical techniques used to solve ordinary differential equations (ODEs), particularly when dealing with stiff equations. Unlike explicit methods, which calculate the next step based solely on known values, implicit methods involve solving an equation that includes both the current and the next values. This is often expressed in the form:

where $k_i$ are the slopes evaluated at intermediate points, and $b_i$ are weights that determine the contribution of each slope. The key advantage of implicit methods is their stability, making them suitable for stiff problems where explicit methods may fail or require excessively small time steps. However, they often require the solution of nonlinear equations at each step, which can increase computational complexity. Overall, implicit Runge-Kutta methods provide a robust framework for accurately solving challenging ODEs.

Ferroelectric domain switching refers to the process by which the polarization direction of ferroelectric materials changes, leading to the reorientation of domains within the material. These materials possess regions, known as domains, where the electric polarization is uniformly aligned; however, different domains may exhibit different polarization orientations. When an external electric field is applied, it can induce a rearrangement of these domains, allowing them to switch to a new orientation that is more energetically favorable. This phenomenon is crucial in applications such as non-volatile memory devices, where the ability to switch and maintain polarization states is essential for data storage. The efficiency of domain switching is influenced by factors such as temperature, electric field strength, and the intrinsic properties of the ferroelectric material itself. Overall, ferroelectric domain switching plays a pivotal role in enhancing the functionality and performance of electronic devices.

Hermite polynomials are a set of orthogonal polynomials that arise in probability, combinatorics, and physics, particularly in the context of quantum mechanics and the solution of differential equations. They are defined by the recurrence relation:

with the initial conditions $H_0(x) = 1$ and $H_1(x) = 2x$. The $n$-th Hermite polynomial can also be expressed in terms of the exponential function and is given by:

These polynomials are orthogonal with respect to the weight function $w(x) = e^{-x^2}$ on the interval $(- \infty, \infty)$, meaning that:

Hermite polynomials play a crucial role in the formulation of the quantum harmonic oscillator and in the study of Gaussian integrals, making them significant in both theoretical and applied

Monopolistic competition is a market structure characterized by many firms competing against each other, but each firm offers a product that is slightly differentiated from the others. This differentiation allows firms to have some degree of market power, meaning they can set prices above marginal cost. In this type of market, firms face a downward-sloping demand curve, reflecting the fact that consumers may prefer one firm's product over another's, even if the products are similar.

Key features of monopolistic competition include:

• Many Sellers: A large number of firms competing in the market.
• Product Differentiation: Each firm offers a product that is not a perfect substitute for others.
• Free Entry and Exit: New firms can enter the market easily, and existing firms can leave without significant barriers.

In the long run, the presence of free entry and exit leads to a situation where firms earn zero economic profit, as any profits attract new competitors, driving prices down to the level of average total costs.

Organic Field-Effect Transistors (OFETs) are a type of transistor that utilizes organic semiconductor materials to control electrical current. Unlike traditional inorganic semiconductors, OFETs rely on the movement of charge carriers, such as holes or electrons, through organic compounds. The operation of an OFET is based on the application of an electric field, which induces a channel of charge carriers in the organic layer between the source and drain electrodes. Key parameters of OFETs include mobility, threshold voltage, and subthreshold slope, which are influenced by factors like material purity and device architecture.

The basic structure of an OFET consists of a gate, a dielectric layer, an organic semiconductor layer, and source and drain electrodes. The performance of these devices can be described by the equation:

where $I_D$ is the drain current, $\mu$ is the carrier mobility, $C_{ox}$ is the gate capacitance per unit area, $W$ and $L$ are the width and length of the channel, and $V_{GS}$ is the gate-source voltage with $V_{th}$ as the threshold voltage. The unique properties of organic materials, such as flexibility and low processing temperatures, make OFET

Nanotube functionalization refers to the process of modifying the surface properties of carbon nanotubes (CNTs) to enhance their performance in various applications. This is achieved by introducing various functional groups, such as –OH (hydroxyl), –COOH (carboxylic acid), or –NH2 (amine), which can improve the nanotubes' solubility, reactivity, and compatibility with other materials. The functionalization can be performed using methods like covalent bonding or non-covalent interactions, allowing for tailored properties to meet specific needs in fields such as materials science, electronics, and biomedicine. For example, functionalized CNTs can be utilized in drug delivery systems, where their increased biocompatibility and targeted delivery capabilities are crucial. Overall, nanotube functionalization opens up new avenues for innovation and application across a variety of industries.