The tunnel diode operates based on the principle of quantum tunneling, a phenomenon where charge carriers can move through a potential barrier rather than going over it. This unique behavior arises from the diode's heavily doped p-n junction, which creates a very thin depletion region. When a small forward bias voltage is applied, electrons from the n-type region can tunnel through the potential barrier into the p-type region, leading to a rapid increase in current.
As the voltage increases further, the current begins to decrease due to the alignment of energy bands, which reduces the number of available states for tunneling. This leads to a region of negative differential resistance, where an increase in voltage results in a decrease in current. The tunnel diode is thus useful in high-frequency applications and oscillators due to its ability to switch quickly and operate at low voltages.
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