Tunneling Magnetoresistance (TMR) is a phenomenon observed in magnetic tunnel junctions (MTJs), where the resistance of the junction changes significantly in response to an external magnetic field. This effect is primarily due to the alignment of electron spins in ferromagnetic layers, leading to an increased probability of electron tunneling when the spins are parallel compared to when they are anti-parallel. TMR is widely utilized in various applications, including:
Overall, TMR technology is instrumental in enhancing the performance and efficiency of modern electronic devices, paving the way for innovations in memory and sensor technologies.
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