Anisotropic etching is a specialized technique used in semiconductor manufacturing and microfabrication that selectively removes material from a substrate in a specific direction. This process is crucial for creating well-defined features with high aspect ratios, which means deep structures in relation to their width. Unlike isotropic etching, where material is removed uniformly in all directions, anisotropic etching allows for greater control and precision, resulting in vertical sidewalls and sharp corners.
This technique can be achieved using various methods, including wet etching with specific chemicals or dry etching techniques such as Reactive Ion Etching (RIE). The choice of method affects the etching profile and the materials that can be effectively used. Anisotropic etching is widely employed in the fabrication of microelectronic devices, MEMS (Micro-Electro-Mechanical Systems), and nanostructures, making it a vital process in modern technology.
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