Graphene-Based Field-Effect Transistors (GFETs) are innovative electronic devices that leverage the unique properties of graphene, a single layer of carbon atoms arranged in a hexagonal lattice. Graphene is renowned for its exceptional electrical conductivity, high mobility of charge carriers, and mechanical strength, making it an ideal material for transistor applications. In a GFET, the flow of electrical current is modulated by applying a voltage to a gate electrode, which influences the charge carrier density in the graphene channel. This mechanism allows GFETs to achieve high-speed operation and low power consumption, potentially outperforming traditional silicon-based transistors. Moreover, the ability to integrate GFETs with flexible substrates opens up new avenues for applications in wearable electronics and advanced sensing technologies. The ongoing research in GFETs aims to enhance their performance further and explore their potential in next-generation electronic devices.
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