Resistive RAM (ReRAM oder RRAM) is a type of non-volatile memory that stores data by changing the resistance across a dielectric solid-state material. Unlike traditional memory technologies such as DRAM or flash, ReRAM operates by applying a voltage to induce a resistance change, which can represent binary states (0 and 1). This process is often referred to as resistive switching.
One of the key advantages of ReRAM is its potential for high speed and low power consumption, making it suitable for applications in next-generation computing, including neuromorphic computing and data-intensive applications. Additionally, ReRAM can offer high endurance and scalability, as it can be fabricated using standard semiconductor processes. Overall, ReRAM is seen as a promising candidate for future memory technologies due to its unique properties and capabilities.
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