Silicon-On-Insulator (SOI) transistors are a type of field-effect transistor that utilize a layer of silicon on top of an insulating substrate, typically silicon dioxide. This architecture enhances performance by reducing parasitic capacitance and minimizing leakage currents, which leads to improved speed and power efficiency. The SOI technology enables smaller transistor sizes and allows for better control of the channel, resulting in higher drive currents and improved scalability for advanced semiconductor devices. Additionally, SOI transistors can operate at lower supply voltages, making them ideal for modern low-power applications such as mobile devices and portable electronics. Overall, SOI technology is a significant advancement in the field of microelectronics, contributing to the continued miniaturization and efficiency of integrated circuits.
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