The Tunneling Field-Effect Transistor (TFET) is a type of transistor that leverages quantum tunneling to achieve low-voltage operation and improved power efficiency compared to traditional MOSFETs. In a TFET, the current flow is initiated through the tunneling of charge carriers (typically electrons) from the valence band of a p-type semiconductor into the conduction band of an n-type semiconductor when a sufficient gate voltage is applied. This tunneling process allows TFETs to operate at lower bias voltages, making them particularly suitable for low-power applications, such as in portable electronics and energy-efficient circuits.
One of the key advantages of TFETs is their subthreshold slope, which can theoretically reach values below the conventional limit of 60 mV/decade, allowing for steeper switching characteristics. This property can lead to higher on/off current ratios and reduced leakage currents, enhancing overall device performance. However, challenges remain in terms of manufacturing and material integration, which researchers are actively addressing to make TFETs a viable alternative to traditional transistor technologies.
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