Thin film stress measurement is a crucial technique used in materials science and engineering to assess the mechanical properties of thin films, which are layers of material only a few micrometers thick. These stresses can arise from various sources, including thermal expansion mismatch, deposition techniques, and inherent material properties. Accurate measurement of these stresses is essential for ensuring the reliability and performance of thin film applications, such as semiconductors and coatings.
Common methods for measuring thin film stress include substrate bending, laser scanning, and X-ray diffraction. Each method relies on different principles and offers unique advantages depending on the specific application. For instance, in substrate bending, the curvature of the substrate is measured to calculate the stress using the Stoney equation:
where is the stress in the thin film, is the modulus of elasticity of the substrate, is the Poisson's ratio, and are the thicknesses of the substrate and film, respectively, and is the radius of curvature. This equation illustrates the relationship between film stress and
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