Electron Beam Lithography (EBL) is a sophisticated technique used to create extremely fine patterns on a substrate, primarily in semiconductor manufacturing and nanotechnology. This process involves the use of a focused beam of electrons to expose a specially coated surface known as a resist. The exposed areas undergo a chemical change, allowing selective removal of either the exposed or unexposed regions, depending on whether a positive or negative resist is used.
The resolution of EBL can reach down to the nanometer scale, making it invaluable for applications that require high precision, such as the fabrication of integrated circuits, photonic devices, and nanostructures. However, EBL is relatively slow compared to other lithography methods, such as photolithography, which limits its use for mass production. Despite this limitation, its ability to create custom, high-resolution patterns makes it an essential tool in research and development within the fields of microelectronics and nanotechnology.
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